sot-89 -3l plastic-encapsulate transistors 2sc2383 transistor (npn) feature z high voltage: v ceo =160v z large continuous collector current capability marking 2383 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current -continuous 1 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55 ~ +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage v (br)cbo i c = 100 a , i e =0 160 v collector-emitter breakdown voltage v (br)ceo * i c = 10ma, i b =0 160 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb =150v, i e =0 1 a emitter cut-off current i ebo v eb =6v, i c =0 1 a dc current gain h fe v ce =5v, i c =200ma 100 320 collector-emitter saturation voltage v ce(sat) i c =500m a, i b =50ma 1 v base-emitter voltage v be i c =5ma, v ce = 5v 0.45 0.75 v transition frequency f t v ce =5v, i c =200ma 20 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 20 pf * pulse test classification of h fe rank o y range 100-200 160-320 sot-89 -3l 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2013
40 80 120 160 200 20 40 60 80 100 0.1 1 10 100 1000 0 200 400 600 800 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0.1 1 10 100 1000 10 100 1000 0.1 1 10 100 1000 1 10 100 1000 0.1 1 10 1 10 100 1000 0 200 400 600 800 1000 1200 0.1 1 10 100 1000 01234567 0 50 100 150 200 250 300 20 i c f t ?? common emitter v ce =5v t a =25 collector current i c (ma) transition frequency f t (mhz) =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 2sc2383 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v 3000 30 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =5v static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.2ma 0.3ma 0.4ma i b =0.1ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2013
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